PhD Thesis: Integration and characterization of ferroelectric memory devices 1

Developing innovative technology solutions and bringing them to application - that is our goal at the Fraunhofer Institute for Photonic Microsystems IPMS. With our expertise in the development of photonic microsystems, related technologies including nanoelectronics and wireless communication solutions, we create - in flexible and interdisciplinary teams - technologies for innovative products in a wide range of markets such as automotive, industrial, aerospace and defense.

The development of new components and integration concepts for semiconductor devices with a wide range of applications is an important field of research at the Center Nanoelectronic Technologies of the Fraunhofer IPMS. One research focus is on the development of non-volatile memory technologies based on ferroelectric hafnium oxide. These are used beyond traditional storage applications, including AI applications. Two promising approaches exist for ferroelectric memories. One is the so-called FeFET (1T) concept, in which the ferroelectric is used as the gate dielectric of a transistor, and the other is the FRAM (1T1C) concept, in which the ferroelectric is used as the capacitor dielectric.

As a PhD student you will work together with our team and industry partner to transfer these technologies into existing technology nodes. Since ferroelectricity in HfO2 occurs only in a metastable orthorhombic phase, whose stability range depends on a variety of parameters, such as layer thickness, dopant content and type, layer stresses and thermal post-treatment which need to be optimized. In this work, the dependence of these process parameters on the ferroelectric properties such as remanent polarization, cycle endurance and microvariability will be investigated and correlated with physical properties of the films such as composition and crystallographic phase.

What you will do

• Deposition of ferroelectric HfO2 layer stack and device integration thereof
• Physical characterization of the HfO2 layers thus produced, e.g. by XRD, XPS, SEM/TEM and AFM
• Generation of ferroelectric memory devices for electrical characterization of the films in terms of reliability, polarization hysteresis and leakage current
• On-site integration support at the industry partner
• Communication with project partners and customers 
• Presentation of scientific results at conferences and publications in journals

What you bring to the table

• Completed scientific university studies in the field of electrical engineering, physics, material sciences or comparable master's or diploma degree
• Knowledge in at least one of the following areas is advantageous: electrical/structural characterization, memory technology, ferroelectric materials
• Analytical and structured way of thinking and working combined with strong communication skills, joy of teamwork and assertiveness
• Ability to quickly familiarize yourself with new technical-scientific contexts
• Good written and spoken English as a basis for working in an international team

What you can expect

You want to do a doctorate? You want to plan and design your doctorate with foresight and strategy? Within the framework of our doctoral college, you will benefit from a regular exchange with other doctoral students. We support your personal and professional development with individual training measures.

We offer female scientists the opportunity to participate in our TALENTA program: a comprehensive career and development program that includes individually tailored qualification offers. You can find out more here.

We are convinced that appreciation and trust are the basis for satisfaction and motivation. We create a work-life balance through flexible working time models and the possibility of mobile working, because creative and innovative ideas can arise anywhere. We also attach great importance to intensive induction training and an open and collegial working environment. Whether sports, music or team events - we offer a wide range of opportunities to pursue our own passions together and strengthen our team spirit.

The weekly working time is 39 hours. This position is also available on a part-time basis. We value and promote the diversity of our employees' skills and therefore welcome all applications - regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, sexual orientation and identity. Severely disabled persons are given preference in the event of equal suitability. Appointment, remuneration and social security benefits based on the public-sector collective wage agreement (TVöD). Additionally Fraunhofer may grant performance-based variable remuneration components.

With its focus on developing key technologies that are vital for the future and enabling the commercial utilization of this work by business and industry, Fraunhofer plays a central role in the innovation process. As a pioneer and catalyst for groundbreaking developments and scientific excellence, Fraunhofer helps shape society now and in the future. 

Interested? Apply online now. We look forward to getting to know you!

Contact

Ms. Isabell Zwinscher
Human Resources

Telephone: +49 (0)351 8823-1227

Mr. Dr. Konrad Seidel
Specialty Department

Telephone: +49 (0)351 2607-3059

Fraunhofer Institute for Photonic Microsystems IPMS

Requisition Number: 74131                Application Deadline: 09/26/2023